Semiconductor device

ABSTRACT

A semiconductor device includes gate electrodes and interlayer insulating layers alternately stacked on a substrate, a channel layer penetrating through the gate electrodes and the interlayer insulating layers, and a gate dielectric layer disposed on an external surface of the channel layer between the gate electrodes and the channel layer. In addition, the channel layer includes a first region extended in a direction perpendicular to a top surface of the substrate and a second region connected to the first region in a lower portion of the first region and including a plane inclined with respect to the top surface of the substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims benefit of priority under 35 U.S.C. §119 toKorean Patent Application No. 10-2016-0055405, filed on May 4, 2016, inthe Korean Intellectual Property Office, the disclosure of which isincorporated herein by reference in its entirety.

BACKGROUND

1. Field

The present concepts relate to a semiconductor device.

2. Description of Related Art

Although the size of electronic products has gradually decreased, thereremains a continued demand for high-capacity data processing. Therefore,there is a demand for an increased degree of integration ofsemiconductor devices used in electronic products. To increase thedegree of integration of semiconductor devices, semiconductor deviceshaving a vertical transistor structure, instead of having a prior artplanar transistor structure, have been developed.

SUMMARY

An aspect of the present inventive concept may provide a semiconductordevice including transistors having improved properties, configuring amemory cell string, in such a manner that a disconnection phenomenon ina lower portion of a channel layer is resolved, and a thickness of thechannel layer is reduced.

According to an aspect, the present disclosure is directed to asemiconductor device comprising: gate electrodes and interlayerinsulating layers alternately stacked on a substrate; a channel layerpenetrating through the gate electrodes and the interlayer insulatinglayers; and a gate dielectric layer disposed on an external surface ofthe channel layer between the gate electrodes and the channel layer,wherein the channel layer includes a first region extended in adirection perpendicular to a top surface of the substrate and a secondregion connected to the first region in a lower portion of the firstregion and having planes inclined with respect to the top surface of thesubstrate, and wherein the second region extends below the gatedielectric layer.

According to another aspect, the present disclosure is directed to asemiconductor device comprising: conductive layers and interlayerinsulating layers alternately stacked on a substrate; a channel layerpenetrating through the conductive layers and the interlayer insulatinglayers to be extended in a direction perpendicular to the substrate; anda gate dielectric layer disposed between the conductive layers and thechannel layer, wherein at least one portion of the channel layerincludes a plurality of inclined planes having a width narrowed in adirection toward the substrate.

According to another aspect, the present disclosure is directed to amethod of manufacturing a semiconductor device comprising: alternatelystacking interlayer insulating layers and sacrificial layers on asubstrate; forming channel holes penetrating through the interlayerinsulating layers and the sacrificial layers to format least a firstrecessed region on the substrate; forming an epitaxial layer on thefirst recessed region of the substrate; forming a gate dielectric layercovering a side wall of the channel holes and a top surface of theepitaxial layer; forming a sacrificial spacer layer on the gatedielectric layer; removing a portion of the gate dielectric layerdisposed on the top surface of the epitaxial layer using the sacrificialspacer layer; forming at least a second recessed region having aplurality of inclined planes and extended below of the gate dielectriclayer in an upper portion of the epitaxial layer while the sacrificialspacer layer is removed; and forming a channel layer on the gatedielectric layer to allow the second recessed region to be filled.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features and other advantages of thedisclosed embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

FIG. 1 is a schematic block diagram of a semiconductor device accordingto an example embodiment t;

FIG. 2 is an equivalent circuit diagram of a memory cell array of asemiconductor device according to an example embodiment;

FIG. 3 is a schematic perspective view illustrating a structure ofmemory cell strings of a semiconductor device according to an exampleembodiment;

FIGS. 4 and 5 are cross-sectional views illustrating a channel layeraccording to an example embodiment, and a region corresponding to region‘A’ in FIG. 3 is illustrated therein;

FIGS. 6A and 6B are cross-sectional views illustrating a gate dielectriclayer according to an example embodiment, and a region corresponding toregion ‘B’ in FIG. 3 is illustrated therein;

FIGS. 7 to 18 are schematic views illustrating a method of manufacturinga semiconductor device according to an example embodiment;

FIG. 19 is a schematic perspective view illustrating a structure ofmemory cell strings of a semiconductor device according to an exampleembodiment;

FIGS. 20 and 21 are cross-sectional views illustrating an epitaxiallayer according to an example embodiment, and a region corresponding toregion ‘C’ in FIG. 19 is illustrated therein;

FIGS. 22 to 26 are schematic views illustrating a method ofmanufacturing a semiconductor device according to an example embodiment;

FIG. 27 is a schematic perspective view of a semiconductor deviceaccording to an example embodiment;

FIGS. 28 to 29 are schematic views illustrating a method ofmanufacturing a semiconductor device according to an example embodiment;

FIG. 30 is a schematic perspective view of a semiconductor deviceaccording to an example embodiment;

FIG. 31 is a block diagram of a storage device including a semiconductordevice according to an example embodiment;

FIG. 32 is a block diagram of an electronic device including asemiconductor device according to an example embodiment; and

FIG. 33 is a block diagram of an electronic system including asemiconductor device according to an example embodiment.

DETAILED DESCRIPTION

Hereinafter, embodiments will be described as follows with reference tothe attached drawings. In a description of example embodiments, a Millerindex is used in notation describing crystallographic planes anddirections.

As used herein, items described as being “electrically connected” areconfigured such that an electrical signal can be passed from one item tothe other. Therefore, a passive electrically conductive component (e.g.,a wire, pad, internal electrical line, etc.) physically connected to apassive electrically insulative component (e.g., a prepreg layer of aprinted circuit board, an electrically insulative adhesive connectingtwo device, an electrically insulative underfill or mold layer, etc.) isnot electrically connected to that component. Moreover, items that are“directly electrically connected,” to each other are electricallyconnected through one or more passive elements, such as, for example,wires, pads, internal electrical lines, through vias, etc. As such,directly electrically connected components do not include componentselectrically connected through active elements, such as transistors ordiodes. Directly electrically connected elements may be directlyphysically connected and directly electrically connected.

It will be understood that when an element is referred to as being“connected” or “coupled” to, “in contact with,” or “on” another element,it can be directly connected or coupled to, in contact with, or on theother element or intervening elements may be present. In contrast, whenan element is referred to as being “directly connected,” “directlycoupled,” in “direct contact with,” or “directly on” to another element,there are no intervening elements present. Other words used to describethe relationship between elements should be interpreted in a likefashion (e.g., “between” versus “directly between,” “adjacent” versus“directly adjacent,” etc.). However, the term “contact,” as used hereinrefers to direct contact (i.e., touching) unless the context indicatesotherwise.

Terms such as “same,” “equal,” “planar,” or “coplanar,” as used hereinwhen referring to orientation, layout, location, shapes, sizes, amounts,or other measures do not necessarily mean an exactly identicalorientation, layout, location, shape, size, amount, or other measure,but are intended to encompass nearly identical orientation, layout,location, shapes, sizes, amounts, or other measures within acceptablevariations that may occur, for example, due to manufacturing processes.The term “substantially” may be used herein to emphasize this meaning,unless the context or other statements indicate otherwise. For example,items described as “substantially the same,” “substantially equal,” or“substantially planar,” may be exactly the same, equal, or planar, ormay be the same, equal, or planar within acceptable variations that mayoccur, for example, due to manufacturing processes.

FIG. 1 is a schematic block diagram of a semiconductor device accordingto an example embodiment.

With reference to FIG. 1, a semiconductor device 10 according to anexample embodiment may include a memory cell array 20, a driving circuit30, a read/write circuit 40, and a control circuit 50.

The memory cell array 20 may include a plurality of memory cells, andthe plurality of memory cells may be arranged in a plurality of rows andcolumns. The plurality of memory cells included in the memory cell array20 may be connected to the driving circuit 30 through a word line (WL),a common source line (CSL), a string select line (SSL), a ground selectline (GSL), or the like, and may be connected to the read/write circuit40 through a bit line (BL). According to an example embodiment, each ofthe plurality of memory cells may be connected to one WL and one BL. Thememory cells arranged in the same row may be connected to the same WL,while the memory cells arranged in the same column may be connected tothe same BL.

The plurality of memory cells included in the memory cell array 20 maybe divided into a plurality of memory blocks. Each memory block mayinclude a plurality of WLs, a plurality of SSLs, a plurality of GSLs, aplurality of BLs, and at least one CSL.

The driving circuit 30 and the read/write circuit 40 may be undertakenby the control circuit 50. According to an example embodiment, thedriving circuit 30 may receive address information from an externalsource and instructions to decode the received address information, andthe driving circuit 30 may selecting at least one portion of the WL, theCSL, the SSL, and the GSL, connected to the memory cell array 20. Thedriving circuit 30 may include a driving circuit corresponding to eachof the WL, the SSL, and the CSL.

The read/write circuit 40 may select at least one portion of the BLsconnected to the memory cell array 20 according to a command received bythe control circuit 50. The read/write circuit 40 may read data storedin a memory cell connected to the at least one selected portion of theBLs or may record or store data in the memory cell connected to the atleast one selected portion of the BLs. In order to perform operations,including those described above, the read/write circuit 40 may include acircuit, such as a page buffer, an input/output buffer, a data latch,and the like.

The control circuit 50 may control an operation of the driving circuit30 and the read/write circuit 40 in response to a control signal CTRLtransmitted from the external source. In a case in which data stored inthe memory cell array 20 is read, the control circuit 50 may control theoperation of the driving circuit 30 to allow a voltage required for aread operation to be supplied to the WL connected to the memory cellstoring data to read the stored data. In a case in which the voltagerequired for a read operation is supplied to a specific WL, the controlcircuit 50 may control the read/write circuit 40 to allow the read/writecircuit 40 to read data stored in the memory cell connected to thespecific WL receiving the voltage for a read operation.

In an embodiment in which data is written in the memory cell array 20,the control circuit 50 may control the operation of the driving circuit30 to allow a voltage required for a write operation to be supplied tothe WL connected to the memory cell to write data to the memory cell. Inan embodiment in which the voltage required for a write operation issupplied to a specific WL, the control circuit 50 may control theread/write circuit 40 to allow data to be written in the memory cellconnected to the specific WL receiving the voltage required for a writeoperation.

FIG. 2 is an equivalent circuit diagram of an exemplary memory cellarray of a semiconductor device according to an example embodiment.

FIG. 2 illustrates a three-dimensional structure of the memory cellarray included in a semiconductor device having a vertical structure,such as, for example, semiconductor device 100. With reference to FIG.2, the memory cell array according to the example embodiment may includen memory cell transistors MC1 to MCn connected in series, ground selecttransistor (GST) connected to opposing ends of the memory celltransistors MC1 to MCn connected in series, and a plurality of memorycell strings each including a string select transistor (SST).

The n memory cell transistors MC1 to MCn connected in series may beconnected to n WLs WL1 to WLn, respectively, to select at least oneportion of the memory cell transistors MC1 to MCn.

A gate terminal of the GST may be connected to a GSL, while a sourceterminal may be connected to a CSL. In the meantime, a gate terminal ofthe SST may be connected to an SSL, while the source terminal may beconnected to a drain terminal of a memory cell transistor MCn. FIG. 2illustrates a structure in which a single GST and a single SST areconnected to n memory cell transistors MC1 to MCn connected in series.Alternatively, however, a plurality of GSTs or a plurality of SSTs maybe connected to n memory cell transistors MC1 to MCn connected inseries.

A drain terminal of the SST may be connected to m BLs BL1 to BLm. In acase in which a signal is applied to the gate terminal of the SSTthrough the SSL, a signal applied through the BLs BL1 to BLm may betransmitted to n memory cell transistors MC1 to MCn connected in series,so that a data read operation or a data write operation may beundertaken.

FIG. 3 is a schematic perspective view illustrating a structure ofmemory cell strings of a semiconductor device according to an exampleembodiment. FIG. 4 is a cross-sectional view illustrating a channellayer according to an example embodiment, and a region corresponding toregion ‘A’ in FIG. 3 is illustrated therein.

With reference to FIGS. 3 and 4, a semiconductor device 100 may includea substrate 101, channel holes CH extended in a direction perpendicularto a top surface of the substrate 101, channel layers 150 disposed inthe channel holes CH, and interlayer insulating layers 120 and gateelectrodes 130, stacked along a side wall of the channel holes CH. Inaddition, the semiconductor device 100 may further include epitaxiallayers 140 disposed between the channel layers 150 and the substrate101, gate dielectric layer 160 disposed between the channel layers 150and the gate electrodes 130, an impurity region 105 disposed in thesubstrate 101 between the gate electrodes 130, a conductive layer 107disposed on the impurity region 105, and conductive pads 190 disposed inan upper portion of the channel layers 150.

In the semiconductor device 100, a single memory cell string may beformed based on a single channel layer 150. The semiconductor device 100may include a plurality of memory cell strings disposed in columns androws in X and Y directions.

The substrate 101 may include the top surface extended in the X and Ydirections. The substrate 101 may include a semiconductor material, suchas a group IV semiconductor, a group III-V compound semiconductor or agroup II-VI compound semiconductor. For example, the group IVsemiconductor may include silicon (Si), germanium (Ge), orsilicon-germanium (SiGe). The substrate 101 may be provided as a bulkwafer or an epitaxial layer.

The gate electrodes 130 (e.g., gate electrodes 131 to 138) and theinterlayer insulating layers 120 (e.g., interlayer insulating layers 121to 129) may be alternately stacked on the substrate 101. For example,interlayer insulating layer 129 may be stacked on gate electrode 138,which may be stacked on interlayer insulating layer 128, which may bestacked on gate electrode 137, which may be stacked on interlayerinsulating layer 127, and so on.

The gate electrodes 130 (e.g., gate electrodes 131 to 138) may bedisposed to be spaced apart from each other in a Z direction, extendingfrom the substrate 101, along a side surface of respective channellayers 150. With reference to FIG. 2, respective gate electrodes 130 maybe provided as a gate of a GST, memory cell transistors MC1 to MCn, andan SST. A gate electrode 130 may be extended to form WLs WL1 to WLn.

FIG. 3 illustrates an example in which five gate electrodes 132 to 136of the memory cell transistors MC1 to MCn are disposed. In someembodiments, five gate electrodes 132 to 136 may correspond to fivememory cell transistors MC1 to MC5. However, the embodiments are notlimited thereto. Depending on a capacity of the semiconductor device100, the number of the gate electrodes 130 forming the memory celltransistors MC1 to MCn may be determined, and may vary. For example, thenumber of the gate electrodes 130 forming the memory cell transistorsMC1 to MCn may be 30 or more. In some embodiments, for example, 30 gateelectrodes 130 may form 30 memory cell transistors MC1 to MC30.

A gate electrode 131 of the GST may be extended in a Y direction to forma GSL. In order to operate the GST, a predetermined impurity may bedoped in the substrate 101 below the gate electrode 131. Gate electrodes137 and 138 of the SST may be extended in the Y direction to form anSSL. In addition, a portion of the gate electrodes 130 may be providedas a dummy gate electrode. For example, the gate electrode 130 adjacentto the gate electrode 131 of the GST (e.g., gate electrode 132) or thegate electrodes 130 disposed adjacent to the gate electrodes 137 and 138of the SST (e.g., gate electrode 135 or gate electrode 136) may beprovided as a dummy gate electrode.

The gate electrodes 130 may include a metal, such as tungsten (W). Inaddition, a diffusion barrier 170 may be disposed to substantiallysurround the gate electrodes 130. For example, the diffusion barrier 170may include at least one of a tungsten nitride (WN), a tantalum nitride(TaN), and a titanium nitride (TiN). In an example embodiment, the gateelectrodes 130 may include polycrystalline silicon or a metal silicidematerial. For example, the metal silicide material may be provided as asilicide material including a metal selected from cobalt (Co), nickel(Ni), hafnium (Hf), platinum (Pt), W, and titanium (Ti).

The interlayer insulating layers 120 (e.g., interlayer insulating layers121 to 129) may be alternately disposed between the gate electrodes 130.For example, interlayer insulating layer 129 may be stacked on gateelectrode 138, which may be stacked on interlayer insulating layer 128,which may be stacked on gate electrode 137, which may be stacked oninterlayer insulating layer 127, and so on. In a manner the same as thatof the gate electrodes 130, the interlayer insulating layers 120 may bedisposed to be spaced apart from each other in a Z direction and to beextended in the Y direction. The interlayer insulating layers 120 mayinclude an insulating material, such as a silicon oxide or a siliconnitride.

The gate dielectric layer 160 may be disposed between the gateelectrodes 130 and the channel layers 150. As illustrated in FIG. 4, abottom portion of the gate dielectric layer 160 may include an L-shapedcross section. For example, the bottom portion of the gate dielectriclayer 160 may be formed at an angle relative to other portions of thegate dielectric layer 160. Although FIG. 4 illustrates the bottomportion of the gate dielectric layer 160 formed at an acute angle, thebottom portion of the gate dielectric layer 160 may be formed at anobtuse angle or a right angle relative to other portions of the gatedielectric layer 160. The gate dielectric layer 160 may include atunneling layer 162, a charge storage layer 164, and a blocking layer166, stacked on the channel layers 150 in sequence. For example, thetunneling layer 162 may be formed on an outside surface of the channellayers 150, the charge storage layer 164 may be formed on an outsidesurface of the tunneling layer 162, and the blocking layer 166 may beformed on an outside surface of the charge storage layer 164. The gatedielectric layer 160 in the example embodiment may be disposed in such amanner that an entirety of the tunneling layer 162, the charge storagelayer 164, and the blocking layer 166 may be extended in a verticaldirection (e.g., a Z-direction) along the channel layer 150. A thicknessof the layers configuring the gate dielectric layer 160 is not limitedto the thickness illustrated in an example embodiment, but may bevariously changed.

The tunneling layer 162 may allow a charge (for example, an electron) totunnel to the charge storage layer 164 using the Fowler-Nordheim (F-N)mechanism. For example, the tunneling layer 162 may include the siliconoxide. The charge storage layer 164 may be provided as a charge trappinglayer or a floating gate conductive layer. For example, the chargestorage layer 164 may include an insulating layer including a quantumdot or a nanocrystal. In this case, the quantum dot or the nanocrystalmay include a conductive material, such as fine particles of a metal ora semiconductor. For example, the charge storage layer 164 may beprovided as the charge trapping layer including the silicon nitride.

The blocking layer 166 may include a silicon oxide (SiO₂) a siliconnitride (Si₃N₄), a silicon oxynitride (SiON), a high-k dielectricmaterial or a combination thereof. The high-k dielectric material may beprovided as one of an aluminum oxide (Al₂O₃), a tantalum oxide (Ta₂O₃),titanium dioxide (TiO₂), an yttrium oxide (Y₂O₃), zirconium dioxide(ZrO₂), a zirconium silicate (ZrSi_(x)O_(y)), a hafnium oxide (HfO₂), ahafnium silicate (HfSi_(x)O_(y)), a lanthanum oxide (La₂O₃), a lanthanumaluminum oxide (LaAl_(x)O_(y)), a lanthanum hafnium oxide(LaHf_(x)O_(y)), a hafnium aluminum oxide (HfAl_(x)O_(y)), and apraseodymium oxide (Pr₂O₃).

The channel layers 150 may penetrate through the gate electrodes 130 andthe interlayer insulating layers 120 to be extended in a directionsubstantially perpendicular to the top surface of the substrate 101(e.g., Z direction). In addition, the channel layers 150 may have a formin which a width thereof is reduced in a direction toward the substrate101, as an aspect ratio (the aspect ratio representing a ratio of theheight of an opening to a width of the opening) of the channel hole CHis increased. For example, a width of the channel layers 150 may besmaller in portions nearer to the substrate 101 and wider in portionsfarther away from the substrate 101 in the Z-direction. The channellayers 150 may be disposed to be spaced apart from each other in the Xand Y directions. However, an array of the channel layers 150 may varyaccording to an example embodiment. For example, the array of thechannel layers 150 may be disposed in a zigzag shape in at least onedirection. In addition, the array of the channel layers 150 disposedadjacently to each other on opposite sides of the conductive layer 107may be symmetrical, as illustrated in an example embodiment, but theconcept is not limited thereto.

The channel layer 150 may include a semiconductor material, such aspolycrystalline silicon and single crystal silicon. In addition, thesemiconductor material may be provided as an undoped material or amaterial including a p-type or an n-type impurity.

Each channel layer 150 may include a vertically-provided portion 150 ahaving a pipe shape and extended in a direction perpendicular to the topsurface of the substrate 101 (e.g., a Z direction) and a connectionportion 150 b connected to a lower portion or end of thevertically-provided portion. In some embodiments, the connection portion150 b may extend across a bottom of the pipe shape of thevertically-provided portion 150 a. An interior of the channel layer 150may be filled with a first insulating layer 182.

The connection portion 150 b may include a first plane PL1 extendedbelow the bottom portion of the gate dielectric layer 160 and a secondplane PL2 inclined at a specific angle α with respect to the top surfaceof the substrate 101 in a direction different from that of the firstplane PL1. The connection portion 150 b may include a plurality of thesecond planes PL2, while the second planes PL2 may meet each other toform a pointed shape, pointed toward a substrate disposed therebelow. Inother words, due to the angle α of the second planes PL2, the connectionportion 150 b may have a width that narrows as the connection portion150 b extends in a direction toward the substrate disposed therebelow.In some embodiments, each of the inclined second planes PL2 has a widththat narrows in a direction toward the substrate.

The first plane PL1 and the second plane PL2 of the connection portion150 b may meet below the bottom portion of the gate dielectric layers160. In addition, the first plane PL1 may be provided as an interface atwhich the connection portion 150 b is in contact with a portion of abottom surface of the gate dielectric layers 160, and may be formed onthe same plane as the bottom surface of the gate dielectric layers 160.In some embodiments, a bottom surface of the blocking layer 166 may beadjacent to and facing the first plane PL1.

For example, in a case in which the substrate 101 is provided as a (100)silicon substrate, an angle α between the second plane PL2 of theconnection portion 150 b and the top surface of the substrate 101 may besubstantially the same as the angle between a (100) crystal plane and a(111) crystal plane of a diamond crystal structure.

An epitaxial layer 140 may be disposed between the channel layer 150 andthe substrate 101, and may be in contact with the channel layer 150 andthe substrate 101. For example, the epitaxial layer 140 may be incontact with the connection portion 150 b of the channel layer 150. Insome embodiments, the epitaxial layer 140 may be disposed below thechannel layer 150 and the gate dielectric layers 160. The channel layer150 may be electrically connected to the substrate 101 through theepitaxial layer 140. The epitaxial layer 140 may be disposed on arecessed region R1 of the substrate 101. The epitaxial layer 140 mayfill the recessed region R1, and may be extended above the top surfaceof the substrate 101. For example, a top surface of the epitaxial layer140 may be higher than that of the gate electrode 131 disposed in abottom portion of the gate electrodes 130, and may be lower than abottom surface of the gate electrode 132. The top surface of theepitaxial layer 140 may include an inclined plane having a convexcentral portion that narrows to a point as it nears the substrate 101,forming a conically-shaped or pyramidically-shaped recess in theepitaxial layer 140.

An upper portion of the epitaxial layer 140 may include a recessedregion R2 in contact with the connection portion 150 b of the channellayer 150. The second plane PL2 of the connection portion 150 b may beprovided as an interface at which the epitaxial layer 140 is in contactwith the channel layer 150. In a manufacturing process, a form of theconnection portion 150 b may be determined by a form of the recessedregion R2 formed in the upper portion of the epitaxial layer 140. Forexample, the shape of the connection portion 150 b may be the negativeor reverse of the shape of the shape of the recessed region R2 formed inthe upper portion of the epitaxial layer 140.

Although an aspect ratio of the channel layer 150 is increased as thechannel layer nears the substrate 101, the channel layer 150 may beelectrically connected to the substrate 101 by the epitaxial layer 140,and properties of the GST may become uniform. The epitaxial layer 140may be provided as a semiconductor material layer formed using aselective epitaxial growth (SEG) process. The epitaxial layer 140 mayinclude Si, Ge, or SiGe, and may be undoped or doped with an impurity.

An epitaxial insulating layer 169 may be disposed between the epitaxiallayer 140 and the gate electrode 131. The epitaxial insulating layer 169may act as a gate insulating layer of the GST. The epitaxial insulatinglayer 169 may be provided as an oxide formed in such a manner that aportion of the epitaxial layer 140 is oxidized. For example, theepitaxial insulating layer 169 may be provided as SiO₂.

In an upper portion of the memory cell string, a conductive pad 190 maybe disposed to cover a top surface of the first insulating layer 182 tobe electrically connected to the channel layer 150. For example, theconductive pad 190 may include doped polycrystalline silicon. Theconductive pad 190 may act as a drain region of the SST (see FIG. 2).The conductive pad 190 may be electrically connected to the BL through acontact plug.

In a bottom portion of the memory cell string, the impurity region 105,which is arranged in the X direction, may be disposed. The impurityregion 105 may be extended in the Y direction, adjacent to the topsurface of the substrate 101, and may be disposed to be spaced apartfrom each other by a predetermined interval in the X direction. Forexample, the impurity region 105 may be disposed in the substrate 101and a top surface of the impurity region 105 may be at a same level as atop surface of the substrate 101. The impurity region 105 may act as asource region of the GST (see FIG. 2).

The conductive layer 107 may be disposed on the impurity region 105, andthe conductive layer 107 may be disposed to be extended along theimpurity region 105 in the Y direction. For example, the conductivelayer 107 may extend congruently with the impurity region 105 in the Ydirection. The conductive layer 107 may include a conductive material.For example, the conductive layer 107 may include W, aluminum (Al), orcopper (Cu). The conductive layer 107 may be electrically isolated fromthe gate electrodes 130 by second insulating layers 184, and the secondinsulating layers 184 may insulate the conductive layer 107 from thegate electrodes 130.

FIG. 5 is a cross-sectional view illustrating a channel layer accordingto an example embodiment, and a region corresponding to region ‘A’ inFIG. 3 is illustrated therein. FIG. 5 illustrates a structure in which aform of a connection portion of a channel layer illustrated in FIG. 4 ismodified.

With reference to FIG. 5, each channel layer 150′ may include avertically-provided portion 150 a having a pipe shape and extended in adirection perpendicular to a top surface of a substrate 101 (e.g., a Zdirection), and a connection portion 150 b′ connected to a lower portionor end of the vertically-provided portion 150 a. In some embodiments,the connection portion 150 b′ may extend across a bottom of the pipeshape of the vertically-provided portion 150 a. An interior of thechannel layers 150′ may be filled with a first insulating layer 182.

The connection portion 150 b′ may include a first plane PL1 extendedbelow a bottom portion of a gate dielectric layer 160 and a second planePL2 inclined at a specific angle α with respect to a top surface of thesubstrate 101. The connection portion 150 b′ may further include a thirdplane PL3 connecting the first plane PL1 to the second plane PL2. Insome embodiments, the first plane PL1 may be parallel, or substantiallyparallel, to the top surface of the substrate 101.

The connection portion 150 b′ may include a plurality of the secondplanes PL2, while the second planes PL2 may meet each other to form apointed shape, pointed toward a substrate disposed therebelow. Forexample, the plurality of second planes PL2 may form a faceted conicalor pyramidical shape.

The first plane PL1 and the second plane PL2 of the connection portion150 b′ may meet below the gate dielectric layer 160. In addition, thesecond plane PL2 and the third plane PL3 may also meet below the gatedielectric layer 160.

The first plane PL1 may be provided as an interface at which theconnection portion 150 b′ is in contact with a portion of a bottomsurface of the gate dielectric layers 160, and may be formed on the sameplane as the bottom surface of the gate dielectric layers 160. In someembodiments, a bottom surface of the blocking layer 166 may be adjacentto and facing the first plane PL1.

For example, in a case in which the substrate 101 is provided as a (100)silicon substrate, an angle α between the second plane PL2 of theconnection portion 150 b′ and the top surface of the substrate 101 maybe substantially the same as the angle between a (100) crystal plane anda (111) crystal plane of a diamond crystal structure.

FIGS. 6A and 6B are cross-sectional views illustrating gate dielectriclayers according to example embodiments, and a region corresponding toregion ‘B’ in FIG. 3 is illustrated therein.

With reference to FIG. 6A, a gate electrode 133, a diffusion barrier170, a gate dielectric layer 160 a, a channel layer 150, and a firstinsulating layer 182 of memory cell strings are illustrated. The gatedielectric layer 160 a may have a structure in which a tunneling layer162, a charge storage layer 164, and blocking layers 166 a 1 and 166 a 2are stacked on the channel layer 150 in sequence. For example, thetunneling layer 162 may be stacked on the channel layer 150, the chargestorage layer 164 may be stacked on the tunneling layer 162, theblocking layer 166 a 1 may be stacked on the charge storage layer 164,and the blocking layer 166 a 2 may be stacked on the blocking layer 166a 1. A thickness of the layers configuring the gate dielectric layer 160is not limited to the thickness illustrated in an example embodiment,but may be variously changed.

In a manner different from example embodiments in FIGS. 4 and 5, in thecase of the gate dielectric layer 160 a, the blocking layers 166 a 1 and166 a 2 may include two layers. For example, a first blocking layer 166a 1 may be vertically extended in a manner the same as the channel layer150, and a second blocking layer 166 a 2 may be disposed tosubstantially surround the gate electrode 133 and the diffusion barrier170. For example, the second blocking layer 166 a 2 may include amaterial having a dielectric constant higher than that of the firstblocking layer 166 a 1.

With reference to FIG. 6B, the gate electrode 133, the diffusion barrier170, a gate dielectric layer 160 b, the channel layer 150, and the firstinsulating layer 182 of the memory cell strings are illustrated. Thegate dielectric layer 160 b may have a structure in which a tunnelinglayer 162 b, a charge storage layer 164 b, and a blocking layer 166 bare stacked on the channel layer 150 in sequence. In a manner differentfrom example embodiments in FIGS. 4 and 5, the gate dielectric layer 160b in the example embodiment may be disposed in such a manner that anentirety of the tunneling layer 162 b, the charge storage layer 164 b,and the blocking layer 166 b may substantially surround the gateelectrode 133 and the diffusion barrier 170.

FIGS. 7 to 18 are schematic views of main operations illustrating amethod of manufacturing a semiconductor device according to exampleembodiments. FIGS. 7 to 18 may illustrate a region corresponding to across-sectional view taken along line X-Z of a perspective view in FIG.3.

With reference to FIG. 7, sacrificial layers 110 (e.g., sacrificiallayers 111 to 118) and interlayer insulating layers 120 (e.g.,interlayer insulating layers 121 to 129) may be alternately stacked on asubstrate 101. As illustrated, the interlayer insulating layers 120 andthe sacrificial layers 110 may be alternately stacked on the substrate101 starting from an interlayer insulating layer 121.

The sacrificial layers 110 may include a material to be etched, thematerial having etch selectivity with respect to the interlayerinsulating layers 120. For example, the interlayer insulating layers 120may include at least one of a silicon oxide and a silicon nitride. Inaddition, the sacrificial layers 110 may include a material differentfrom that of the interlayer insulating layers 120, and may be selectedfrom silicon, a silicon oxide, silicon carbide, and a silicon nitride.

As illustrated, thicknesses of the interlayer insulating layers 120 inan example embodiment may not be the same. For example, the thicknessesof the interlayer insulating layers 120 may be different from oneanother. For example, the interlayer insulating layer 121 disposed in abottom portion of the interlayer insulating layers 120 may be formed tobe relatively thin, while an interlayer insulating layer 129 disposed ina top portion of the interlayer insulating layers 120 may be formed tobe relatively thick. In addition, interlayer insulating layers 122 and127 may be formed to be thicker than interlayer insulating layers 123 to126 and 128. However, a thickness of the interlayer insulating layers120 and the sacrificial layers 110 may be variously changed and may bedifferent from that illustrated in FIG. 7. In addition, the number offilms configuring the interlayer insulating layers 120 and thesacrificial layers 110 may also be variously changed, and may be more orless than the quantities illustrated.

With reference to FIG. 8, channel holes CH penetrating through thesacrificial layers 110 and the interlayer insulating layers 120 may beformed.

The channel holes CH may be extended to the substrate 101 in a Zdirection, and a recessed region R may be formed in the substrate 101.The channel holes CH may be formed through an anisotropic etchingprocess of the sacrificial layers 110 and the interlayer insulatinglayers 120. A side wall of the channel holes CH may not be perpendicularto a top surface of the substrate 101. For example, a width of thechannel holes CH may be reduced in a direction toward the top surface ofthe substrate 101. For example, the channel holes CH may have a narrowercross-sectional width at portions near the top surface of the substrate101, and may have a wider cross-sectional width at portions farther awayfrom the top surface of the substrate 101.

With reference to FIG. 9, an epitaxial layer 140 may be formed on arecessed region R1 in a lower portion of the channel holes CH. In someembodiments, the epitaxial layer 140 may be formed to fill the recessedregion R1.

The epitaxial layer 140 may be formed in such a manner that an SEGprocess is performed using the substrate 101 in the recessed region R1as a seed. The epitaxial layer 140 may be formed to have a single layerstructure or a multilayer structure including different growthconditions or compositions.

The epitaxial layer 140 may be doped with an impurity. The impurity maybe provided as a conductive impurity the same as that in the substrate101 or opposite thereto.

A top surface of the epitaxial layer 140 may be formed to be higher thana top surface of a sacrificial layer 111 disposed adjacently to thesubstrate 101. In addition, the top surface of the epitaxial layer 140may be formed to have a convex shape in an opposite direction to thesubstrate 101. For example, the top surface of the epitaxial layer 140may protrude in the Z direction, away from the top surface of thesubstrate 101, and may form a conical or pyramidical shape. However, insome embodiments, the top surface of the epitaxial layer 140 may beformed to have a flat shape, depending on growth conditions, or thelike.

With reference to FIG. 10, a gate dielectric layer 160 and a sacrificialsemiconductor film 151 may be formed in the channel holes CH, and abovethe sacrificial layers 110 and the interlayer insulating layers 120.

The gate dielectric layer 160 may be formed to have a uniform thicknesson a side wall of the channel holes CH, the top surface of the epitaxiallayer 140, and a top surface of the uppermost one of the interlayerinsulating layers 120 (e.g., interlayer insulating layer 129).

The gate dielectric layer 160 may include a blocking layer 166, a chargestorage layer 164, and a tunneling layer 162 formed in sequence.

The sacrificial semiconductor film 151 may be formed on the gatedielectric layer 160 to have a uniform thickness. The sacrificialsemiconductor film 151 may include a semiconductor material, such aspolycrystalline silicon and amorphous silicon. For example, thesacrificial semiconductor film 151 may be provided as polycrystallinesilicon.

The gate dielectric layer 160 and the sacrificial semiconductor film 151may be formed using an atomic layer deposition (ALD) method or achemical vapor deposition (CVD) method.

With reference to FIG. 11, in a subsequent process, in order to allow achannel layer 150 to be in direct contact with the epitaxial layer 140,a portion of the gate dielectric layer 160 may be removed from thechannel holes CH.

A sacrificial spacer layer 151S may be formed on a side wall of the gatedielectric layer 160 through the anisotropic etching process of thesacrificial semiconductor film 151. The sacrificial spacer layer 151Smay allow the portion of the gate dielectric layer 160 formed on the topsurface of the epitaxial layer 140 to be exposed in a lower portion ofthe channel hole CH.

Subsequently, the gate dielectric layer 160 may be selectively removedin such a manner that the gate dielectric layer 160 is anisotropicallyetched using the sacrificial spacer layer 151S as an etching mask. Inthe meantime, during the anisotropic etching process, the gatedielectric layer 160 disposed below the sacrificial spacer layer 151Smay not be etched. Therefore, the gate dielectric layer 160 may includean L-shaped cross section on the side wall of the channel hole CH.

When the gate dielectric layer 160 is etched, a portion of the epitaxiallayer 140 may be etched at the same time. In some embodiments, a portionof the top surface of the epitaxial layer 140 may be exposed.

With reference to FIG. 12, the sacrificial spacer layer 151S may beremoved, and a recessed region R2 may be formed in an upper portion ofthe epitaxial layer 140.

The sacrificial spacer layer 151S may be removed through an anisotropicwet etching process. The sacrificial spacer layer 151S and the epitaxiallayer 140 may include the same material. In this case, during theanisotropic wet etching process of the sacrificial spacer layer 151S,the upper portion of the epitaxial layer 140 may be etched together withthe sacrificial spacer layer 151S, and thus the recessed region R2 maybe formed. For example, in a case in which both the sacrificial spacerlayer 151S and the epitaxial layer 140 include Si, the anisotropic wetetching process may be performed using an alkaline solution includingNH₄OH, NaOH, or KOH. Through the anisotropic wet etching process, therecessed region R2 may be extended below the gate dielectric layer 160,and may include inclined planes tilting at a specific angle with respectto the top surface of the substrate 101. Due to the inclined planes, therecessed region R2 may include a V-shaped cross section as illustratedin FIG. 12. The inclined planes may correspond to a (111) crystal planeof a diamond crystal structure. In a case in which the substrate 101 isprovided as a (100) silicon substrate, an angle between the inclinedplanes and the top surface of the substrate 101 may be the same as theangle between a (100) crystal plane and the (111) crystal plane of thediamond crystal structure.

With reference to FIG. 13, the channel layer 150 may be formed in thechannel holes CH.

The channel layer 150 may be formed on the gate dielectric layer 160 tohave a specific thickness using the ALD or the CVD method. The channellayer 150 may include a semiconductor material, such as polycrystallinesilicon and amorphous silicon. Although not illustrated in FIG. 13, thechannel layer 150 may be formed on the interlayer insulating layer 129.

The channel layer 150 may be formed to allow the recessed region R2 ofthe epitaxial layer 140 to be filled.

In a case in which the channel layer 150 includes polycrystallinesilicon, in order to prevent the channel layer 150 from being cut off orremoved, the channel layer 150 may be formed to be thicker than a finalthickness, and the thickness thereof may be adjusted to have a requiredfinal thickness through a trimming process. The trimming process may beaccurately performed using a solution, such as an SC1 solution. The SC1solution refers to a mixture solution including deionized water, NH₄OH,and H₂O₂ in a ratio of 5:1:1.

With reference to FIG. 14, a first insulating layer 182 to allow thechannel holes CH to be filled and a conductive pad 190 on the firstinsulating layer 182 may be formed. The first insulating layer 182 maybe provided as an insulating material. The conductive pad 190 may beprovided as a doped semiconductor material.

Subsequently, a first opening OP1 may be formed. The first opening OP1may allow laminates of the sacrificial layers 110 and the interlayerinsulating layers 120 to be spaced apart by a predetermined interval. Anadditional insulating layer 145 may be formed on the interlayerinsulating layer 129 disposed in the top portion of the interlayerinsulating layers 120 and the conductive pad 190, and the first openingOP1 may be formed. The insulating layer 145 may prevent damage to theconductive pad 190 and the channel layer 150 during the subsequentprocess. The first opening OP1 may be formed in such a manner that amask layer is formed using a photolithography process, and thesacrificial layers 110 and the interlayer insulating layers 120 areanisotropically etched. The first opening OP1 may be formed to have atrench form extended in a Y direction (see, for example, FIG. 3). Thefirst opening OP1 may allow the substrate 101 to be exposed between thechannel layers 150.

With reference to FIG. 15, the sacrificial layers 110 exposed throughthe first opening OP1 may be removed using an etching process. Thus, aplurality of lateral openings LP disposed between the interlayerinsulating layers 120 may be formed. Through the lateral openings LP, aportion of side walls of the gate dielectric layers 160 and an epitaxiallayer 140 may be exposed.

With reference to FIG. 16, an epitaxial insulating layer 169 may beformed on the epitaxial layer 140 exposed through the lateral openingsLP.

For example, the epitaxial insulating layer 169 may be formed using anoxidation process. In this case, the epitaxial insulating layer 169 maybe provided as an oxide film formed in such a manner that a portion ofthe epitaxial layer 140 is oxidized. A thickness and a form of theepitaxial insulating layer 169 are not limited to the illustratedembodiment.

In a case in which the oxidation process is performed in the operation,a portion of the gate dielectric layers 160 exposed through the lateralopenings LP may be oxidized, and thus damage caused during the etchingprocess in FIG. 15 may be cured.

With reference to FIG. 17, a diffusion barrier 170 and a gate electrode130 may be formed within the lateral openings LP.

First, the diffusion barrier 170 may be formed to cover the gatedielectric layer 160, the epitaxial insulating layer 169, the interlayerinsulating layer 120, and the substrate 101, which are exposed throughthe first opening OP1 and the lateral openings LP. Subsequently, thegate electrode 130 may be formed to allow the lateral openings LP to befilled. The diffusion barrier 170 is illustrated to be distinguishedfrom the gate electrode 130 in that the diffusion barrier 170 isprovided as a conductive material, and includes a material differentfrom that of the gate electrode 130. However, in terms of a function,the diffusion barrier 170 may be construed as a portion of the gateelectrode 130. In some example embodiments, the diffusion barrier 170may be omitted. The gate electrode 130 may include a metal,polycrystalline silicon, or a metal silicide material. The diffusionbarrier 170 may include WN, TaN, TiN, or a combination thereof.

Subsequently, in order to allow the diffusion barrier 170 and the gateelectrode 130 to only be disposed in the lateral opening LP, a materialcomposing the diffusion barrier 170 and the gate electrode 130, formedin the first opening OP1, may be removed using an additional process,thus forming the second opening OP2. The second opening OP2 may have thetrench form extended in the Y direction (see, for example, FIG. 3).

With reference to FIG. 18, an impurity region 105 may be formed in thesubstrate 101 in the second opening OP2, while a conductive layer 107and a second insulating layer 184 may be formed on the impurity region105.

First, the impurity may be injected into the substrate 101 exposedthrough the second opening OP2, thus forming the impurity region 105.Subsequently, the second insulating layer 184 may be formed on a sidewall of the second opening OP2, and the conductive layer 107 may beformed. The conductive layer 107 may be formed on the impurity region105, and may fill an area between the sidewall of the second openingOP2.

In an example embodiment, the impurity region 105 may be formed afterthe second insulating layer 184 is formed. The impurity region 105 maybe configured to include regions having different impurityconcentrations.

Subsequently, a contact plug connected to the conductive pad 190 may befurther disposed, and a BL connected to the contact plug may be formed,which is not illustrated. The BL may extend in an X direction, and allowthe conductive pads 190 arranged in the X direction to be connected.

FIG. 19 is a schematic perspective view illustrating a structure ofmemory cell strings of a semiconductor device 100A according to anexample embodiment. FIG. 20 is a cross-sectional view illustrating achannel layer according to an example embodiment, and a regioncorresponding to region ‘C’ in FIG. 19 is illustrated therein.

With reference to FIGS. 19 and 20, a semiconductor device 100A mayinclude a substrate 101, a plurality of channel layers 152 disposed in adirection perpendicular to a top surface of the substrate 101, and aplurality of interlayer insulating layers 120 and a plurality of gateelectrodes 130, stacked along a side wall of the channel layers 152. Inaddition, the semiconductor device 100A may further include a gatedielectric layer 160′ disposed between a channel layer 152 and a gateelectrode 130, a conductive layer 107, and a conductive pad 190 disposedin an upper portion of a channel layer 152.

In a manner different from a semiconductor device 100 described withreference to FIGS. 3 and 4, the semiconductor device 100A may have astructure in which an epitaxial layer is not disposed between thechannel layers 152 and the substrate 101. Therefore, only changeddescriptions will be provided below.

Gate dielectric layers 160′ may be disposed between gate electrodes 130and channel layers 152. A bottom portion of the gate dielectric layer160′ may include an L-shaped cross section. The gate dielectric layer160′ may include a tunneling layer 162′, a charge storage layer 164′,and a blocking layer 166′ are stacked on the channel layer 152 insequence. The gate dielectric layer 160′ in the example embodiment maybe disposed in such a manner that an entirety of the tunneling layer162′, the charge storage layer 164′, and the blocking layer 166′ may beextended along the channel layer 152 in a vertical direction.

In the example embodiment, the gate dielectric layers 160′ may beextended below the top surface of the substrate 101, and thus a bottomsurface of the gate dielectric layers 160′ may be formed in a positionlower than the top surface of the substrate 101. For example, the bottomsurface of the gate dielectric layers 160′ may be located below thelowest interlayer insulating layer 120 (e.g., interlayer insulatinglayers 121).

Each channel layer 152 may include a vertically-provided portion 152 ahaving a pipe shape and extended in a direction perpendicular to the topsurface of the substrate 101 (e.g., a Z direction), and a connectionportion 152 b connected to a lower portion or end of thevertically-provided portion 152 a. In some embodiments, the connectionportion 152 b may extend across a bottom of the pipe shape of thevertically-provided portion 152 a. An interior of the channel layers 152may be filled with a first insulating layer 182.

The connection portion 152 b of the channel layer 152 may be disposed inthe substrate 101. The connection portion 152 b may include a firstplane PL1 extended below the bottom portion of the gate dielectric layer160′ and a second plane PL2 inclined at a specific angle α1 with respectto a plane I-I parallel to the top surface of the substrate 101. In someembodiments, the first plane PL1 may be parallel, or substantiallyparallel, to the top surface of the substrate 101. The connectionportion 152 b may include a plurality of the second planes PL2, whilethe second planes PL2 may meet each other to form a pointed shape,pointed toward a substrate disposed therebelow.

The first plane PL1 and the second plane PL2 of the connection portion152 b may meet below the bottom portion of the gate dielectric layers160′. In addition, the first plane PL1 may be provided as an interfaceat which the connection portion 152 b is in contact with a portion of abottom surface of the gate dielectric layer s160′, and may be formed onthe same plane as the bottom surface of the gate dielectric layer 160′.In some embodiments, a bottom surface of the blocking layer 166′ may beadjacent to and facing the first plane PL1.

For example, in a case in which the substrate 101 is provided as the(100) silicon substrate, the angle α1 between the second plane PL2 ofthe connection portion 152 b and the plane I-I parallel to the topsurface of the substrate 101 may be substantially the same as the anglebetween the (100) crystal plane and the (111) crystal plane of thediamond crystal structure.

The substrate 101 may include a recessed region R3 in contact with theconnection portion 152 b of the channel layer 152. The connectionportion 152 b may be included in the recessed region R3 of the substrate101.

The second plane PL2 of the connection portion 152 b may be provided asthe interface at which the substrate 101 is in contact with the channellayer 152. In a manufacturing process, a form or shape of the connectionportion 152 b may be determined by a form or shape of the recessedregion R3 formed in the substrate 101.

FIG. 21 is a cross-sectional view illustrating a channel layer accordingto an example embodiment, and a region corresponding to region ‘C’ inFIG. 19 is illustrated therein. FIG. 21 illustrates a structure in whicha form of a connection portion of a channel layer illustrated in FIG. 20is modified.

With reference to FIG. 21, respective channel layers 152′ each may havea pipe shape or a macaroni shape, and may include a vertically-providedportion 152 a extended in a direction perpendicular to the substrate 101(e.g., a Z direction), and a connection portion 152 b′ connected to alower portion or end of the vertically-provided portion. In someembodiments, the connection portion 152 b′ may extend across a bottom ofthe pipe or macaroni shape of the vertically-provided portion 152 a. Aninterior of the channel layers 152′ may be filled with a firstinsulating layer 182.

The connection portion 152 b′ may include a first plane PL1 extendedbelow the bottom portion of the gate dielectric layer 160′ and a secondplane PL2 inclined at a specific angle α with respect to the top surfaceof the substrate 101. The connection portion 152 b′ may further includea third plane PL3 connecting the first plane PL1 to the second planePL2. In some embodiments, the first plane PL1 may be parallel, orsubstantially parallel, to the top surface of the substrate 101.

The connection portion 152 b′ may include a plurality of the secondplanes PL2, while the second planes PL2 may meet each other to form apointed shape, pointed toward a substrate disposed therebelow. Forexample, the plurality of second planes PL2 may form a conical orpyramidical shape having faceted planes.

The first plane PL1 and the second plane PL2 of the connection portion152 b′ may meet below the gate dielectric layer 160′, while the secondplane PL2 and the third plane PL3 may also meet below the gatedielectric layer 160′.

The first plane PL1 may be provided as an interface at which theconnection portion 152 b′ is in contact with a portion of a bottomsurface of the gate dielectric layer 160′, and may be formed on the sameplane as the bottom surface of the gate dielectric layer 160′.

For example, in a case in which the substrate 101 is provided as a (100)silicon substrate, an angle α1 between the second plane PL2 of theconnection portion 152 b′ and a plane I-I parallel to the top surface ofthe substrate 101 may be substantially the same as the angle between a(100) crystal plane and a (111) crystal plane of a diamond crystalstructure.

FIGS. 22 to 26 are schematic views of main operations illustrating amethod of manufacturing a semiconductor device according to an exampleembodiment. Hereinafter, with reference to FIGS. 7 to 18, descriptionsdifferent from the example embodiments described above will be provided.

With reference to FIG. 22, sacrificial layers 110 (e.g., sacrificiallayers 111 to 118) and interlayer insulating layers 120 (e.g.,interlayer insulating layers 121 to 129) may be alternately stacked on asubstrate 101. Channel holes CH having a hole form may be formed. Thechannel holes CH may penetrate through the sacrificial layers 110 (e.g.,sacrificial layers 111 to 118) and the interlayer insulating layers 120(e.g., interlayer insulating layers 121 to 129).

The channel holes CH may be extended to the substrate 101 in a Zdirection, and a recessed region may be formed in the substrate 101. Forexample, a bottom surface of the channel holes CH may be below a topsurface of the substrate 101.

With reference to FIG. 23, a gate dielectric layer 160 and a sacrificialsemiconductor layer 151 may be formed in the channel holes CH, and abovethe sacrificial layers 110 and the interlayer insulating layers 120.

The gate dielectric layer 160 may be formed to have a uniform thicknesson a side wall of the channel holes CH, a top surface of the substrate101 exposed in the channel holes CH, and a top surface of an uppermostone of the interlayer insulating layers 120 (e.g., interlayer insulatinglayer 129). A bottom surface of the gate dielectric layer 160 may bedisposed to be lower than the top surface of the substrate 101.

A sacrificial semiconductor film 151 may be formed to have a uniformthickness on the gate dielectric layer 160. The sacrificialsemiconductor film 151 may include a semiconductor material, such aspolycrystalline silicon and amorphous silicon.

With reference to FIG. 24, in a subsequent process, in order to allow achannel layer 152 to be in direct contact with the substrate 101, aportion of the gate dielectric layer 160 may be removed from the channelholes CH.

A sacrificial spacer layer 151S may be formed on a side wall of the gatedielectric layer 160 through an anisotropic etching process of thesacrificial semiconductor film 151. Subsequently, the gate dielectriclayer 160 may be selectively removed in such a manner that the gatedielectric layer 160 is anisotropically etched using the sacrificialspacer layer 151S as an etching mask. The gate dielectric layer 160 mayinclude an L-shaped cross section on the side wall of the channel holeCH.

With reference to FIG. 25, the sacrificial spacer layer 151S may beremoved, and a recessed region R3 may be formed in an upper portion ofthe substrate 101.

The sacrificial spacer layer 151S may be removed through an anisotropicwet etching process. The sacrificial spacer layer 151S and the substrate101 may include the same material. In this case, during the anisotropicetching process of the sacrificial spacer layer 151S, the upper portionof the substrate 101 may be etched together with sacrificial spacerlayer 151S, and thus the recessed region R3 may be formed. For example,in a case in which an entirety of the sacrificial spacer layer 151S andthe substrate 101 includes Si, the anisotropic wet etching process maybe performed using an alkaline solution including NH₄OH, NaOH, or KOH.Through the anisotropic wet etching process, the recessed region R3 maybe extended below the gate dielectric layer 160, and may includeinclined planes tilting at a specific angle with respect to the topsurface of the substrate 101. Due to the inclined planes, the recessedregion R3 may include a V-shaped cross section as illustrated in FIG.25. In some embodiments, the recessed region may form a conical orpyramidical shape, having faceted planes. The inclined planes maycorrespond to {111} crystal planes of a diamond crystal structure. In acase in which the substrate 101 is provided as a (100) siliconsubstrate, an angle between the inclined planes and the top surface ofthe substrate 101 may be the same as the angle between a (100) crystalplane and the (111) crystal plane of the diamond crystal structure.

With reference to FIG. 26, the channel layer 152 may be formed in thechannel holes CH. Although not illustrated in FIG. 26, the channel layer152 may be formed on the interlayer insulating layer 129.

The channel layer 152 may include the semiconductor material, such aspolycrystalline silicon and amorphous silicon.

The channel layer 152 may be formed to allow the recessed region R3 ofthe substrate 101 to be filled. In a case in which the channel layer 152includes polycrystalline silicon, in order to prevent the channel layer152 from being cut off or removed, the channel layer 152 may be formedto be thicker than a final thickness, and the thickness thereof may beadjusted to have a required final thickness through a trimming process.The trimming process may be accurately performed using a solution, suchas an SC1 solution. The SC1 solution refers to a mixture solutionincluding deionized water, NH₄OH, and H₂O₂ in a ratio of 5:1:1.

Subsequently, a semiconductor device 100A may be manufactured in such amanner that processes described with reference to FIGS. 14 to 18 areperformed.

FIG. 27 is a schematic perspective view illustrating memory cell stringsof a semiconductor device according to an example embodiment.

With reference to FIG. 27, a semiconductor device 100C may include asubstrate 101, a plurality of channel layers 150 disposed in a directionperpendicular to a top surface of the substrate 101 along an inner sidewall of each channel hole CH, and a plurality of interlayer insulatinglayers 120 and a plurality of gate electrodes 130 stacked along anoutside side wall of the channel layers 150. In addition, thesemiconductor device 100C may further include epitaxial layers 140′disposed between the channel layers 150 and the substrate 101, a gatedielectric layer 160 disposed between a channel layer 150 and a gateelectrode 130, a conductive layer 107 disposed between the secondinsulating layers 184, and a conductive pad 190 disposed in an upperportion of the channel layers 150.

Compared with a semiconductor device 100 described with reference toFIGS. 3 and 4, the semiconductor device 100C may include an epitaxiallayer 140′ having a different form, disposed between the channel layer150 and the substrate 101. Therefore, only changed descriptions will beprovided below.

Respective channel layers 150 may include a vertically-provided portion150 a having a pipe or macaroni shape and extended in a directionperpendicular to the top surface of the substrate 101 (e.g., in a Zdirection), and a connection portion 150 b connected to a lower or endportion of the vertically-provided portion 150 a.

A first plane PL1 and a second plane PL2 of the connection portion 150 bmay meet below the gate dielectric layer 160. In addition, the firstplane PL1 may be provided as an interface at which the connectionportion 150 b is in contact with a portion of a bottom surface of thegate dielectric layer 160, and may be formed on the same plane as thebottom surface of the gate dielectric layer 160.

The epitaxial layer 140′ may be disposed between the channel layer 150and the substrate 101, and may be in contact with the channel layer 150and the substrate 101. The channel layer 150 may be electricallyconnected to the substrate 101 through the epitaxial layer 140′. Theepitaxial layer 140′ may be disposed on a recessed region R4 of thesubstrate 101. The epitaxial layer 140′ may fill the recessed region R4,and may be extended above the top surface of the substrate 101. Forexample, a top surface of the epitaxial layer 140′ may be higher thanthat of a gate electrode 131 disposed in a bottom portion of gateelectrodes 130, and may be lower than a bottom surface of a gateelectrode 132.

The epitaxial layer 140′ may include a recessed region R2 in contactwith the connection portion 150 b of the channel layer 150. Theepitaxial layer 140′ may include a first plane PE1 extended from the topsurface of the substrate 101 and a second plane PE2 inclined withrespect to the top surface of the substrate 101.

An angle between the second plane PE2 of the epitaxial layer 140′ andthe top surface of the substrate 101 may be substantially the same asthe angle between a (100) crystal plane and a (111) crystal plane of adiamond crystal structure. The second plane PE2 of the epitaxial layer140′ may be provided as the interface at which the epitaxial layer 140′is in contact with the substrate 101.

FIGS. 28 to 29 are schematic views of main operations illustrating amethod of manufacturing a semiconductor device according to an exampleembodiment. Hereinafter, descriptions different from the exampleembodiments described above with reference to FIGS. 7 to 18 will beprovided.

With reference to FIG. 28, sacrificial layers 110 (e.g., sacrificiallayers 111 to 118) and interlayer insulating layers 120 (e.g.,interlayer insulating layers 121 to 129) may be alternately stacked on asubstrate 101. Channel holes CH penetrating through the sacrificiallayers 110 (e.g., sacrificial layers 111 to 118) and the interlayerinsulating layers 120 (e.g., interlayer insulating layers 121 to 129) tobe extended to the substrate 101 may be formed.

The channel holes CH are first formed in such a manner that thesacrificial layers 110 (e.g., sacrificial layers 111 to 118) and theinterlayer insulating layers 120 (e.g., interlayer insulating layers 121to 129) are anisotropically etched, and the substrate 101 exposed in thechannel holes CH may be further removed through an anisotropic wetetching process. In a case in which the substrate 101 includes siliconsingle crystal, the anisotropic wet etching process may be performedusing an alkaline solution including NH₄OH, NaOH, or KOH.

When the anisotropic wet etching process is completed, the channel holesCH may extend to the substrate 101 in a Z direction, so that a recessedregion R4 may be formed in the substrate 101. In a case in which thesubstrate 101 includes silicon single crystal, inclined planes of therecessed region R4 may be provided as crystal planes.

With reference to FIG. 29, an epitaxial layer 140′ may be formed on therecessed region R4 in a lower portion of the channel holes CH.

The epitaxial layer 140′ may be formed in such a manner that a selectiveepitaxial growth (SEG) process is performed using the substrate 101 inthe recessed region R4 as a seed. The epitaxial layer 140′ may be formedto have a single layer structure or a multilayer structure includingdifferent growth conditions or compositions.

The epitaxial layer 140′ may be doped with an impurity. The impurity maybe provided as a conductive impurity the same as that in the substrate101 or the opposite thereto.

A top surface of the epitaxial layer 140′ may be formed to be higherthan that of a sacrificial layer 111 disposed adjacently to thesubstrate 101. In addition, the top surface of the epitaxial layer 140′may be formed to have a convex shape in an opposite direction to thesubstrate 101. For example, the top surface of the epitaxial layer 140′may have a conical or pyramidical shape pointing away from a top surfaceof the substrate 101 (e.g., in the Z direction). However, in someembodiments, the top surface of the epitaxial layer 140′ may be formedto have a flat shape, depending on a growth condition, or the like.

Subsequently, a semiconductor device 100C may be manufactured in such amanner that processes described with reference to FIGS. 10 to 18 areperformed.

FIG. 30 is a schematic perspective view of a semiconductor device 100Daccording to an example embodiment.

With reference to FIG. 30, a semiconductor device 100D may include acell region CELL and a peripheral circuit region PERI.

The cell region CELL may correspond to a region in which a memory cellarray 20 in FIG. 1 is disposed, while the peripheral circuit region PERImay correspond to a region in which a driving circuit 30 of the memorycell array 20 in FIG. 1 is disposed. The cell region CELL may bedisposed on the peripheral circuit region PERI. In some embodiments, thecell region CELL may be disposed below the peripheral circuit regionPERI.

The cell region CELL may include a substrate 101′, a plurality ofchannel layers 150 disposed in a direction perpendicular to a topsurface of the substrate 101′, and a plurality of interlayer insulatinglayers 120 and a plurality of gate electrodes 130, stacked along a sidewall of the channel layers 150. In addition, the cell region CELL mayfurther include an epitaxial layer 140 disposed on the substrate 101′ ina lower portion of the channel layer 150, a gate dielectric layer 160disposed between the channel layer 150 and a gate electrode 130, aconductive layer 107 disposed on an impurity region 105, and aconductive pad 190 disposed in an upper portion of the channel layer150.

In the example embodiment, the cell region CELL is illustrated as havinga structure the same as an example embodiment in FIG. 3, but the conceptis not limited thereto. The cell region CELL may include a cell regionCELL according to various disclosed embodiments, as described herein.

The peripheral circuit region PERI may include a base substrate 201, andcircuit devices 230, contact plugs 250, and wiring lines 260 disposed onthe base substrate 201.

The base substrate 201 may include a top surface extended in the X and Ydirections. The base substrate 201 may include an active region definedby a device isolation layer 210. In a portion of the active region, adoped region 205 including an impurity may be disposed. The basesubstrate 201 may include a semiconductor material, such as a group IVsemiconductor, a group II I-V compound semiconductor, or a group II-VIcompound semiconductor. For example, the group IV semiconductor mayinclude Si, Ge, or SiGe. The base substrate 201 may be provided as abulk wafer or an epitaxial layer.

A circuit device 230 may include various types of a field effecttransistor. Respective circuit devices 230 may include a circuit gateinsulating layer 232, a spacer layer 234, and a circuit gate electrode235. The doped region 205 may be disposed in the base substrate 201 ontwo sides of the circuit gate electrode 235 to act as a source region ora drain region of the circuit device 230.

A plurality of peripheral region insulating layers 244, 246, and 248 maybe disposed on the circuit device 230 on the base substrate 201. Aperipheral region insulating layer 244 may include a high density plasma(HDP) oxide film to efficiently fill space between a plurality ofcircuit devices 230.

The contact plugs 250 may penetrate through the peripheral regioninsulating layer 244 to be connected to the doped region 205. Anelectrical signal may be applied to the circuit device 230 through thecontact plugs 250. In a region not illustrated, the contact plugs 250may be connected to the circuit gate electrode 235. The wiring lines 260may be connected to the contact plugs 250, and may be disposed to have amultilayer structure in an example embodiment.

The peripheral circuit region PERI may be first manufactured, and thesubstrate 101′ of the cell region CELL is formed in an upper portionthereof, so that the cell region CELL may be manufactured. The substrate101′ may be formed to have a size equal to or smaller than that of thebase substrate 201. For example, the area of the substrate 101′, asmeasured in the X and Y directions, may be smaller than the area of thebase substrate 201. The substrate 101′ may be formed of polycrystallinesilicon, or may be formed of amorphous silicon to be crystallized.

The cell region CELL and the peripheral circuit region PERI may beconnected in the region not illustrated. For example, an end portion ofthe gate electrode 130 in a Y direction may be electrically connected tothe circuit device 230.

Since the cell region CELL and the peripheral circuit region PERI may bedisposed in an upper portion and in a lower portion, respectively, thesemiconductor device 100D in the example embodiment may be provided as aminiaturized device.

FIG. 31 is a block diagram of a storage device including a semiconductordevice according to an example embodiment.

With reference to FIG. 31, according to the example embodiment, astorage device 1000 may include a controller 1010 communicating with ahost and memories 1020-1, 1020-2, and 1020-3 storing data. Respectivememories 1020-1, 1020-2, and 1020-3 may include the semiconductordevices 100A, 100B, 100C, and 100D, according to various exampleembodiments described above. Each of memories 1020-1, 1020-2, and 1020-3may include, respectively, the same or different ones of thesemiconductor devices 100A, 100B, 100C, and 100D.

The host communicating with the controller 1010 may be provided asvarious electronic devices equipped with the storage device 1000, suchas, for example, a smartphone, a digital camera, a desktop computer, alaptop computer, a portable media player, or the like. The controller1010 may generate a command (CMD) to store data in the memories 1020-1,1020-2, and 1020-3 and/or to output data therefrom after receivingrequests for data writing or reading sent by the host.

As illustrated in FIG. 31, one or more memories 1020-1, 1020-2, and1020-3 may be connected to the controller 1010 in parallel in thestorage device 1000. In some embodiments, the storage device 1000 havinga large capacity, such as a solid state drive (SSD) may be implementedin such a manner that a plurality of memories 1020-1, 1020-2, and 1020-3are connected to the controller 1010 in parallel.

FIG. 32 is a block diagram of an electronic device including asemiconductor device according to an example embodiment.

With reference to FIG. 32, according to the example embodiment, anelectronic device 2000 may include a communications unit 2010, an inputunit 2020, an output unit 2030, a memory 2040, and a processor 2050.

The communications unit 2010 may include a wired/wireless communicationsmodule, for example, a wireless Internet module, a near fieldcommunications module, a global positioning system (GPS) module, amobile communications module, and the like. The wired/wirelesscommunications module included in the communications unit 2010 mayinclude circuitry and be configured to transmit and receive data bybeing connected to external communications networks according to variouscommunications standards.

The input unit 2020 may be a module provided for users to controloperations of the electronic device 2000. The input unit 2020 mayinclude circuitry and other electrical and/or mechanical mechanisms,such as, for example, a mechanical switch, a touchscreen, a voicerecognition module, and the like. In addition, the input unit 2020 mayalso include a finger mouse device or a mouse operated using atrackball, a laser pointer, or the like. The input unit 2020 may furtherinclude various sensor modules by which users may input data.

The output unit 2030 may output information processed in the electronicdevice 2000 in a form of audio or video, while the memory 2040 may storea program, data, or the like, to process and control the processor 2050.The memory 2040 may include one or more semiconductor devices accordingto various example embodiments described above, while the processor 2050may store as well as output data by sending a command to the memory 2040according to required operations.

The memory 2040 may communicate with the processor 2050 through aninterface embedded in the electronic device 2000 or a separateinterface. In a case in which the memory 2040 communicates with theprocessor 2050 through a separate interface, the processor 2050 maystore or output data in or from the memory 2040 through variousinterface standards, such as SD, SDHC, SDXC, MICRO SD, USB, and thelike.

The processor 2050 may control operations of respective units includedin the electronic device 2000. The processor 2050 may perform controland process operations relating to voice calls, video calls, datacommunications, and the like, or may perform control and processoperations to play and manage multimedia. In addition, the processor2050 may process inputs sent by a user through the input unit 2020, andmay output the results through the output unit 2030. Furthermore, theprocessor 2050 may store data required to control operations of theelectronic device 2000 in the memory 2040 or output the data therefrom.The processor 2050 may be, for example, a central processing unit (CPU).

FIG. 33 is a block diagram of an electronic system including asemiconductor device according to an example embodiment.

With reference to FIG. 33, an electronic system 3000 may include acontroller 3100, an input/output device 3200, a memory 3300, and aninterface 3400. The electronic system 3000 may be provided as a mobilesystem or a system transmitting and receiving information. The mobilesystem may be provided as a personal digital assistant (PDA), a portablecomputer, a web tablet, a wireless phone, a mobile phone, a digitalmusic player, or a memory card.

The controller 3100 may run a program and control the electronic system3000. For example, the controller 3100 may be provided as amicroprocessor, a digital signal processor, a microcontroller or adevice similar thereto.

The input/output device 3200 may be used to input or output data of theelectronic system 3000. The electronic system 3000 may be connected toan external device, such as a personal computer or a network to exchangedata with the external device, using the input/output device 3200. Forexample, the input/output device 3200 may be provided as a keypad, akeyboard, or a display.

The memory 3300 may store code and/or data to operate the controller3100 and/or may store data processed by the controller 3100. The memory3300 may include the semiconductor device according to various exampleembodiments described above.

The interface 3400 may be provided as a data transmission channelbetween the electronic system 3000 and a different external device. Thecontroller 3100, the input/output device 3200, the memory 3300, and theinterface 3400 may communicate with each other through a bus 3500.

As set forth above, according to example embodiments, a semiconductordevice including transistors having improved properties, configuring amemory cell string, in such a manner that a disconnection phenomenon ina lower portion of a channel layer is resolved, and a thickness of thechannel layer is reduced may be provided.

While example embodiments have been shown and described above, it willbe apparent to those skilled in the art that modifications andvariations could be made without departing from the spirit and scope ofthe disclosed concepts as defined by the appended claims.

What is claimed is:
 1. A semiconductor device, comprising: gateelectrodes and interlayer insulating layers alternately stacked on asubstrate; a channel layer penetrating through the gate electrodes andthe interlayer insulating layers; and a gate dielectric layer disposedon an external surface of the channel layer between the gate electrodesand the channel layer, wherein the channel layer includes a first regionextended in a direction perpendicular to a top surface of the substrateand a second region connected to the first region in a lower portion ofthe first region and having planes inclined with respect to the topsurface of the substrate, and wherein the second region extends belowthe gate dielectric layer.
 2. The semiconductor device of claim 1,wherein the second region comprises a first plane defined as aninterface between a bottom surface of the gate dielectric layer and thechannel layer and a second plane inclined in a direction different froma direction of the first plane.
 3. The semiconductor device of claim 2,wherein an angle between the second planes and the top surface of thesubstrate is the same as an angle between a (100) crystal plane and a(111) crystal plane of a diamond crystal structure.
 4. The semiconductordevice of claim 2, wherein the second region further comprises a thirdplane connecting the first plane to the second plane, wherein the firstplane intersects the third plane, and wherein the second planeintersects the third plane under the bottom surface of the gatedielectric layer.
 5. The semiconductor device of claim 1, wherein thesubstrate comprises a recessed region in contact with the second regionof the channel layer.
 6. The semiconductor device of claim 1, wherein abottom surface of the gate dielectric layer is lower than the topsurface of the substrate.
 7. The semiconductor device of claim 1,further comprising: an epitaxial layer disposed between the substrateand the channel layer and in contact with the substrate and the channellayer.
 8. The semiconductor device of claim 7, wherein the epitaxiallayer comprises a recessed region in contact with the second region ofthe channel layer.
 9. The semiconductor device of claim 7, wherein theepitaxial layer comprises a first plane extended from the top surface ofthe substrate and a second plane inclined with respect to the topsurface of the substrate.
 10. The semiconductor device of claim 9,wherein the substrate comprises a recessed region in contact with thesecond plane of the epitaxial layer.
 11. The semiconductor device ofclaim 9, wherein an angle between the second plane of the epitaxiallayer and the top surface of the substrate is the same as the anglebetween the (100) crystal plane and the (111) crystal plane of a diamondcrystal structure.
 12. The semiconductor device of claim 1, wherein thegate dielectric layer comprises a tunneling layer, a charge storagelayer, and a blocking layer, stacked on the channel layer in sequence.13. A semiconductor device, comprising: conductive layers and interlayerinsulating layers alternately stacked on a substrate; a channel layerpenetrating through the conductive layers and the interlayer insulatinglayers to be extended in a direction perpendicular to the substrate; anda gate dielectric layer disposed between the conductive layers and thechannel layer, wherein at least one portion of the channel layerincludes a plurality of inclined planes having a width narrowed in adirection toward the substrate.
 14. The semiconductor device of claim13, wherein the at least a portion of the channel layer is disposedwithin the substrate.
 15. The semiconductor device of claim 13, furthercomprising: an epitaxial layer disposed between the channel layer andthe substrate, wherein the plurality of inclined planes are in contactwith the epitaxial layer.
 16. The semiconductor device of claim 13,wherein an angle between each of the plurality of inclined planes andthe top surface of the substrate is the same as an angle between a (100)crystal plane and a (111) crystal plane of a diamond crystal structure.17. The semiconductor device of claim 13, wherein the substratecomprises a recessed region in contact with the plurality of inclinedplanes.
 18. A method of manufacturing a semiconductor device,comprising: alternately stacking interlayer insulating layers andsacrificial layers on a substrate; forming channel holes penetratingthrough the interlayer insulating layers and the sacrificial layers toform at least a first recessed region on the substrate; forming anepitaxial layer on the first recessed region of the substrate; forming agate dielectric layer covering a side wall of the channel holes and atop surface of the epitaxial layer; forming a sacrificial spacer layeron the gate dielectric layer; removing a portion of the gate dielectriclayer disposed on the top surface of the epitaxial layer using thesacrificial spacer layer; forming at least a second recessed regionhaving a plurality of inclined planes and extended below of the gatedielectric layer in an upper portion of the epitaxial layer while thesacrificial spacer layer is removed; and forming a channel layer on thegate dielectric layer to allow the second recessed region to be filled.19. The method of claim 18, wherein the forming of the second recessedregion is performed through an anisotropic wet etching process using analkaline solution.
 20. The method of claim 19, wherein the alkalinesolution comprises ammonium hydroxide (NH₄OH), sodium hydroxide (NaOH),or potassium hydroxide (KOH).